| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing method and processing apparatus capable of remarkably decreasing an amount of foreign materials adhered to a wafer so as to improve the yield in plasma processing processes for manufacturing a semiconductor device. <P>SOLUTION: The plasma processing apparatus provided with a plasma source controllable of plasma distribution controls the shape of a sheath-bulk boundary above the wafer to be an upward convex form in plasma ON/OFF states. Adoption of a step, for the processing processes, of controlling the plasma distribution to be higher toward external portions through the application of a lower source power and a wafer bias power in the plasma ON/OFF states to form a thicker sheath around the center and a thinner sheath than the thickness of the sheath above around the outer circumference above the wafer. <P>COPYRIGHT: (C)2007,JPO&INPIT |
