| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory which can realize high speed burst read-out by reducing a needless time caused before start of next memory access when suspension is caused. <P>SOLUTION: A first latency counter and a 16W boundary counter count the number of clock cycles corresponding to an access time of memory access even during a suspension period by operating the first latency counter and the 16W boundary counter counting the number of clock cycles corresponding to the access time of memory access independently of a clock enable signal. Therefore, these count values indicates the number of clock cycles at the point of time of actual completion of memory access. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
