| 摘要 |
A semiconductor memory device includes a bit line sense amplifying block that senses and amplifies bit line data. A first driving block drives a pull up power line of the bit line sense amplifying block using a voltage applied to a normal driving voltage terminal. A second driving block drives the normal driving voltage terminal using an over driving voltage. An over driving signal generation block generates an over driving signal that defines an over driving interval in response to an active command. An external power supply voltage level detection block detects a voltage level of the external power supply voltage. A selective output block selectively outputs the over driving signal in response to an output signal of the external power supply voltage level detection block, wherein an output signal of the selective output block controls the second driving block.
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