Plastically deformable irreversible storage medium and method of producing one such medium

摘要

The storage medium comprises an array of memory cells ( 3 ) which can be addressed by first ( 1 ) and second ( 2 ) conductors. Each memory cell ( 3 ) comprises one zone ( 10 ) of an active layer ( 8 ) which is initially electrically insulating and which can be made electrically conductive by means of localised plastic deformation ( 4 ), such as to selectively connect the first ( 1 ) and second ( 2 ) associated conductors. Binary information stored in the memory cell ( 3 ) is determined by the electrical conducting state of the corresponding zone ( 10 ) of the active layer ( 8 ). The active layer ( 8 ) can be formed using a charged resin. The medium production method comprises assembly of a blank storage medium having an active layer ( 8 ) which is in the initial insulating state, production of a stamping die having a stamping pattern that corresponds to the information to be stored, and stamping of the storage medium using the stamping die.