| 摘要 |
PROBLEM TO BE SOLVED: To improve breakdown voltage of a lateral pnp transistor without adding a new process in a semiconductor device where MOSFET and the lateral pnp transistor coexist. SOLUTION: An emitter 83 and a collector 84 of the lateral pnp transistor 80 have same LDD structures as those of a source 61 and a drain 62 of MOSFET 60. The emitter 83 and the collector 84 of the LDD structures are manufactured by forming poly-si gates 210 and 211 in a lateral pnp transistor forming region 200 at the time of forming a poly-si gate 210 in a MOSFET forming region 100, and implanting ions twice in the region 200 in the same way as in the region 100. The emitter 83 and the collector 84 of the LDD structures improve breakdown voltage of the lateral pnp transistor 80. COPYRIGHT: (C)2007,JPO&INPIT
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