| 摘要 |
<P>PROBLEM TO BE SOLVED: To make a boron phosphide system semiconductor layer superior in crystallinity with small density of a crystal defect such as twin crystal and a lamination defect, and to improve various characteristics as an element by using the boron phosphide system semiconductor layer. <P>SOLUTION: The semiconductor element 10 is provided with a single crystal material layer 101 and the boron phosphide system semiconductor layer 102 formed on the surface of the single crystal material layer 101. The single crystal material layer 101 is formed of a hexagonal system. The boron phosphide system semiconductor layer 102 formed of the hexagonal system is installed on a surface consisting of a ä1.1.-2.0.} crystal face. <P>COPYRIGHT: (C)2007,JPO&INPIT |
