| 摘要 |
PROBLEM TO BE SOLVED: To provide an active matrix substrate which can prevent any failure in a TFT due to side etching or filtration of an etchant, or lowering of element formation density on an element formation substrate, deterioration of image quality or occurrence of cracks. SOLUTION: The active matrix substrate is provided with a substrate 31, wiring comprised of a gate line 32 and a signal line 33 which are formed like a matrix on the substrate 31, and an element 1 which is arranged corresponding with the crossing area of the wiring and includes a thin film transistor 2 and contact pads 7, 8 and 9 connected with the thin-film transistor 2. In this case, the element 1 is provided with an outer side 10 separated in the in-plane direction of the substrate 31, and the channel of the thin-film transistor is arranged so that the direction of channel of the thin-film transistor may be inclined against the wiring direction of the gate lines 32 and 33 which are arranged like a matrix on the substrate. COPYRIGHT: (C)2007,JPO&INPIT |
