| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element, which is equipped with a group III nitride semiconductor as a substrate, having excellent performance characteristics and a long laser oscillation life. SOLUTION: In a group III nitride semiconductor laminate structure on a GaN substrate, a laser beam guide wave region is established only above a low dislocation region between a dislocation concentration region penetrating the substrate in the vertical direction and a high luminescence region. And at the same time, current filter layers are established at a portion located downward of the dislocation concentration region in the lower surface of the substrate and at the portion located upward of the dislocation concentration region of the substrate in the upper surface of the laminated structure, respectively. COPYRIGHT: (C)2007,JPO&INPIT
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