发明名称 ORGANIC SEMICONDUCTOR MATERIAL AND ORGANIC FIELD EFFECT TRANSISTOR
摘要 <p>Disclosed is an adequately stable organic semiconductor material which can be used in a coating process while having high regularity and crystallinity. For obtaining such an organic semiconductor material, there is used a compound wherein 6-20 five-membered and/or six-membered aromatic rings are bound. This compound contains a partial structure represented by the formula (1) below, while having a mobility of not less than 1.0 × 10&lt;SUP&gt;-3&lt;/SUP&gt; cm&lt;SUP&gt;2&lt;/SUP&gt;/Vs and an ionization potential in the solid state of not less than 4.8 eV and not more than 5.6 eV. (1) In the formula, R&lt;SUP&gt;1&lt;/SUP&gt; and R&lt;SUP&gt;2&lt;/SUP&gt; independently represent a hydrogen atom or a monovalent organic group. In this connection, at least one of R&lt;SUP&gt;1&lt;/SUP&gt; and R&lt;SUP&gt;2&lt;/SUP&gt; is an optionally substituted aromatic group.</p>
申请公布号 WO2007034841(A1) 申请公布日期 2007.03.29
申请号 WO2006JP318649 申请日期 2006.09.20
申请人 MITSUBISHI CHEMICAL CORPORATION;OHBA, YOSHIHIRO;SATO, KAZUAKI;SAKAI, YOSHIMASA;ARAMAKI, SHINJI 发明人 OHBA, YOSHIHIRO;SATO, KAZUAKI;SAKAI, YOSHIMASA;ARAMAKI, SHINJI
分类号 H01L51/30;H01L29/786;H01L51/05 主分类号 H01L51/30
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