发明名称 Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby
摘要 A process capable of integrating both planar and non-planar transistors onto a bulk semiconductor substrate, wherein the channel of all transistors is definable over a continuous range of widths.
申请公布号 US2007069293(A1) 申请公布日期 2007.03.29
申请号 US20050238444 申请日期 2005.09.28
申请人 KAVALIEROS JACK T;BRASK JUSTIN K;DOYLE BRIAN S;SHAH UDAY;DATTA SUMAN;DOCZY MARK L;METZ MATTHEW V;CHAU ROBERT S 发明人 KAVALIEROS JACK T.;BRASK JUSTIN K.;DOYLE BRIAN S.;SHAH UDAY;DATTA SUMAN;DOCZY MARK L.;METZ MATTHEW V.;CHAU ROBERT S.
分类号 H01L21/84;H01L27/12 主分类号 H01L21/84
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