NONVOLATILE SEMICONDUCTOR MEMORY DEVICE HAVING DUMMY BIT LINE STRUCTURE WITH IMPROVED DATA READING ACCURACY OF MEMORY CELL, ESPECIALLY CONNECTING DUMMY BIT LINE OR DUMMY BIT SECTION ADJACENT TO NORMAL BIT LINE TO WELL REGION

摘要

A nonvolatile semiconductor memory device is disclosed having a dummy bit line formed from a plurality of dummy bit line sections. The particular dummy bit line sections are variously connected a common source line and a P-type well region.