| 摘要 |
A semiconductor manufacturing apparatus is provided to perform in-situ CLN without corrosion and crack of the surface of a metallic heater under a high temperature by forming a ceramic coating on the metallic heater using an ALD(Atomic Layer Deposition). A semiconductor manufacturing apparatus comprises a chamber(1), a metallic heater(2), a gas jet unit(3) for spraying a gas onto the metallic heater, a TMA(TriMethyl-Aluminium) pipeline(4) and an H2O pipeline(5) for supplying vaporized TMA and H2O to the metallic heater through the gas jet unit, a TMA removing unit(6) and an H2O removing unit(7) connected to the gas jet unit, a vacuum pump(8) for keeping an inner pressure of the chamber in a predetermined range, an N2 removing unit(9). A ceramic coating is formed on the metallic heater. The ceramic coating is formed by using an ALD.
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