发明名称 |
METHOD OF FABRICATING THE COPPER INTERCONNECTION LAYER IN SEMICONDUCTOR DEVICE |
摘要 |
A method for fabricating a semiconductor device capable of preventing a device failure is provided. The method includes: forming an insulating layer with a contact hole on a semiconductor substrate; forming a seed layer on the contact hole through electroless plating process; and forming a metal interconnection in the contact hole on the seed layer. |
申请公布号 |
KR100702797(B1) |
申请公布日期 |
2007.03.27 |
申请号 |
KR20050120587 |
申请日期 |
2005.12.09 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
KIM, JAE HONG |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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