发明名称 Methods and apparatuses for reducing infant mortality in semiconductor devices utilizing static random access memory (SRAM)
摘要 In accordance with various embodiments of the present invention, a cache-equipped semi-conductor device is provided with enhanced error detection logic to detect a first location-independent error within an area of the cache memory and prevent further use of the area if the error is determined to be the second consecutive error associated with a common area.
申请公布号 US7197670(B2) 申请公布日期 2007.03.27
申请号 US20030750562 申请日期 2003.12.31
申请人 INTEL CORPORATION 发明人 BOATRIGHT BRYAN D.;EAPEN BEN J.;SHIRLEY C. GLENN;SCAFIDI CARL
分类号 G06F11/00;G06F11/07 主分类号 G06F11/00
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