| 摘要 |
A method for forming a trench isolation layer in a semiconductor device is provided to lessen the convergence of an electric field by obtaining a round profile from an upper corner of a semiconductor substrate adjacent to a moat portion of the trench isolation layer using a planarizing process and a dry oxidation under oxygen gas atmosphere. An isolation trench(402) is formed on a semiconductor substrate(400) by an etching process using a hard mask pattern. A sidewall oxide layer(420) is formed in the trench. A liner nitride layer(430) is formed along an upper surface of the resultant structure. A buried insulating layer(440) for filling the trench is formed on the liner nitride layer. A planarizing process is performed on the buried insulating layer to expose the hard mask pattern to the outside. A dry oxidation is performed on the resultant structure by using oxygen gas. Then, the hard mask pattern is removed therefrom.
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