A method of forming a multi-layered dual-polysilicon structure,申请号KR20000021415-传众专利搜索

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发明名称	A method of forming a multi-layered dual-polysilicon structure
摘要
申请公布号	KR100697963(B1)	申请公布日期	2007.03.23
申请号	KR20000021415	申请日期	2000.04.22
申请人		发明人
分类号	H01L21/768;H01L21/3205	主分类号	H01L21/768
代理机构		代理人
主权项
地址

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