| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high-performance thin-film transistor exhibiting excellent TFT characteristic in such a way that an oxide semiconductor thin film containing a zinc oxide (ZnO) being a constituent semiconductor thin film (active layer) of the thin film transistor as a main component and a gate insulation film joined to the oxide semiconductor thin film are continuously forme in a vacuum state to form a clean interface between these two layers, and to provide a method of manufacturing a thin-film transistor which can be easily mass-produced. <P>SOLUTION: In the method of manufacturing a thin-film transistor which has a semiconductor thin film consisting of an oxide containing a zinc oxide (ZnO) as a main component and a gate insulation film consisting of a silicon-based insulation film and joined to the semiconductor film, the formation of the semiconductor film and the formation of the gate insulation film are executed in continuous processes in a vacuum state. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
