PIEZZORESISTIVT TOJNINGSELEMENT

摘要

A silicon diaphragm with integrated piezo-resistive semi-conductor strain-gauge elements typically in bridge circuit arrangement is intended for use in pressure-measuring transducers. Radial and tangential semi-conductor strain-gauge elements 3 to 6 provided on the diaphragm 1 are arranged in pairs on different radii of the diaphragm. The diaphragm has a crystal orientation having an anisotropy of the piezo-resistive coefficients along the direction of the strain-gauge elements, the strain-gauge elements being arranged in the vicinity of selected crystal axes which lie in the plane of the diaphragm, extend perpendicularly of one another and in which the piezo- resistive coefficient has a maximum transmission factor. The strain-gauge elements are connected to form an open full bridge circuit into which a suitable resistance network is connected for temperature compensation.