| 摘要 |
PROBLEM TO BE SOLVED: To provide an ashing apparatus having a novel structure that suppresses the generation of Si digging defect without a drop in throughput. SOLUTION: The ashing apparatus is provided with an ashing processing chamber 1 for ashing, and a conveyance chamber 2 connected with the ashing chamber 1 through a gas cutoff mechanism 3, and it is also provided with a substrate cooling mechanism wherein the ashed substrate 6 is cooled at 130°C or lower without being exposed in an atmosphere, while the following substrate to be processed is being ashed. COPYRIGHT: (C)2007,JPO&INPIT
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