| 摘要 |
<P>PROBLEM TO BE SOLVED: To enable to obtain a laminate structure provided with a semiconductor layer excellent in crystallinity even when it has a group III nitride semiconductor layer containing a large number of crystal defects on a substrate, and to improve characteristics as an element. <P>SOLUTION: A compound semiconductor element having the group III nitride semiconductor layer 102 is provided with a first joining structure section 20A consisting of the hexagonal group III nitride semiconductor layer 102 having its surface of ä1.1.-2.0. } crystal surface, and a boron phosphide system compound semiconductor layer 103 provided so as to bonded on the surface of the semiconductor layer 102. <P>COPYRIGHT: (C)2007,JPO&INPIT |
