| 摘要 |
<p>A method of processing a semiconductor substrate (3) comprises spinning the semiconductor substrate (3) while dispensing a reactive etching agent (7) onto a first surface of the spinning substrate (3) to etch a first region (8) of the surface (3). Simultaneously, a neutralising agent (9) is dispensed onto the first surface to neutralise etching agent (9) that has flowed away from the first region (8) of the surface (3), thereby substantially preventing processing of another region (10) of the first surface located nearer an edge of the substrate (3) than is the first region (8). The processing may be etching.</p> |
