| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an electric resistance measurement pattern which is suitable for specifying places where a film thickness is thinned in a wiring of a Cu wiring or the like, for example, by a CMP treatment without increasing any chip size, and also to provide a method of manufacturing the semiconductor device. SOLUTION: The semiconductor device is equipped with an upper layer circuit wiring 21b, an electric resistance measurement pattern 22a for measuring a film thickness of the upper layer circuit wiring 21b by an electric resistance value, and measuring pads 24a/24b for electrically connecting an electric resistance measuring instrument. The electric resistance measurement pattern 22a and the measuring pads 24a/24b are electrically connected to each other through lower layer connection wirings 23a/23b arranged in layers different from layers, where these measuring pads and the electric resistance measurement pattern 22a are arranged. COPYRIGHT: (C)2007,JPO&INPIT
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