| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for improving crystallinity of a semiconductor device in which a defect of silicon crystallinity occurring in junction region or surface region or disturbance of crystal such as contamination by heavy metal is recovered when a semiconductor device is fabricated. <P>SOLUTION: The method for improving crystallinity of a semiconductor device comprises steps of: implanting cyan ions, under vacuum pressure reduction state, into the junction region of the semiconductor device, the junction region of the semiconductor device and the vicinity thereof, the surface region of the semiconductor device, or the surface region of the semiconductor device and the vicinity thereof; and heat treating the semiconductor device subjected to ion implantation under high temperature. Defect of crystallinity and contamination is recovered by the inventive method. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
