发明名称 SOLID-STATE IMAGE SENSING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a solid-state image sensing device which is capable of increasing its operating speed when it operates with low resolution. SOLUTION: The solid-state image sensing device is equipped with a first pixel row 1a including pixels 11a, 11b to 11h that are arranged in a certain direction and generate signal charge through photoelectric conversion; a first storage gate row 3a including storage gates 31a, 31b to 31h that are arranged in parallel with the first pixel row 1a, and store the signal charge generated by the first pixel row 1a; and a first CCD register 5a that compounds at least every two out of the signal charge stored in the storage gates of the first storage gate row 3a, and successively transfers the compounded signal charge when it operates with low resolution. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007074421(A) 申请公布日期 2007.03.22
申请号 JP20050259691 申请日期 2005.09.07
申请人 TOSHIBA MICROELECTRONICS CORP;TOSHIBA CORP 发明人 MATSUURA MASAKAZU
分类号 H01L27/148;H04N5/335;H04N5/341;H04N5/347;H04N5/369;H04N5/372;H04N5/378 主分类号 H01L27/148
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