| 摘要 |
Etch equipment for fabricating a semiconductor device is provided to uniformly supply gas for generating plasma to the inside of a chamber through a GDP(gas distribution part) by forming holes in the GDP wherein the size of the hole increases as it goes from the center to the edge of the GDP. A GDP(20) is of a disc type corresponding to a wafer. Gas for generating plasma is introduced to the inside of the GDP through a gas introduction pipe installed in the center part of the upper surface of the GDP. The gas for generating plasma is introduced into an etch chamber through holes(24a,24b) formed on the entire region of the lower surface of the GDP. The size of the holes formed on the entire region of the lower surface of the GDP increases as it goes from the center to the edge of the GDP so that the gas for generating plasma introduced into the GDP can be uniformly introduced into the etch chamber. The holes can have a size satisfying the following formula according to a Pascal's law. X2=k^0.5ÎX1(X2 is a radius of a hole, k is a proportional constant, and X1 is a radius of a gas introduction pipe).
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