| 摘要 |
PROBLEM TO BE SOLVED: To more reduce the opening size of a resist pattern to achieve a more fine processing without increasing the number of process such as rinsing process of coat forming agents, etc. SOLUTION: The pattern forming method includes steps of; forming a lower organic film 11 and an upper resist film 12 containing an inorganic element on a substrate 10 to be processed; developing a pattern exposed on the resist film 12 to form a first resist pattern 21; supplying a coat forming agent 31 to the resist film 12 with the first resist pattern 21 formed thereon to bury a coat film 32 in openings of the resist film 12; thermally shrinking the coat film 32 to narrow the openings of the resist film 12, thereby forming a second pattern 22; removing the coat film 32 by oxygen plasma processing; and successively selectively removing the lower film 11 with the resist film 12 used as a mask to process the coat film 32 and the lower film 11 en bloc. COPYRIGHT: (C)2007,JPO&INPIT |
