发明名称 Overlay key, method of forming the overlay key, semiconductor device including the overlay key and method of manufacturing the semiconductor device
摘要 An overlay key formed in a scribe lane and used to align a circuit pattern may include a lower overlay mark formed on a metal silicide layer directly in contact with a silicon substrate. A method of forming an overlay key in a scribe lane may include providing a silicon substrate, forming a metal silicide layer to be in direct contact with the silicon substrate, and forming a lower overlay mark on the metal silicide layer.
申请公布号 US2007063317(A1) 申请公布日期 2007.03.22
申请号 US20060472376 申请日期 2006.06.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM DAE-JOUNG;LEE DAE-YOUP;YOU JI-YONG;SUH CHUN-SUK;YOO DO-YUL
分类号 H01L29/06;H01L21/00;H01L21/336;H01L23/48;H01L23/52;H01L29/40 主分类号 H01L29/06
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