发明名称 |
Overlay key, method of forming the overlay key, semiconductor device including the overlay key and method of manufacturing the semiconductor device |
摘要 |
An overlay key formed in a scribe lane and used to align a circuit pattern may include a lower overlay mark formed on a metal silicide layer directly in contact with a silicon substrate. A method of forming an overlay key in a scribe lane may include providing a silicon substrate, forming a metal silicide layer to be in direct contact with the silicon substrate, and forming a lower overlay mark on the metal silicide layer.
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申请公布号 |
US2007063317(A1) |
申请公布日期 |
2007.03.22 |
申请号 |
US20060472376 |
申请日期 |
2006.06.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM DAE-JOUNG;LEE DAE-YOUP;YOU JI-YONG;SUH CHUN-SUK;YOO DO-YUL |
分类号 |
H01L29/06;H01L21/00;H01L21/336;H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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