发明名称 CREATING A DIELECTRIC LAYER USING ALD TO DEPOSIT MULTIPLE COMPONENTS
摘要 <p>A dielectric layer is created for use with non-volatile memory and/or other devices. The dielectric layer is created using atomic layer deposition to deposit multiple components whose mole fractions change as a function of depth in the dielectric layer in order to create a rounded bottom of a conduction band profile for the dielectric layer.</p>
申请公布号 WO2007033019(A1) 申请公布日期 2007.03.22
申请号 WO2006US35058 申请日期 2006.09.08
申请人 SANDISK CORPORATION;MOKHLESI, NIMA 发明人 MOKHLESI, NIMA
分类号 C23C16/455;C23C16/40;H01L21/28;H01L21/314 主分类号 C23C16/455
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