发明名称 |
CREATING A DIELECTRIC LAYER USING ALD TO DEPOSIT MULTIPLE COMPONENTS |
摘要 |
<p>A dielectric layer is created for use with non-volatile memory and/or other devices. The dielectric layer is created using atomic layer deposition to deposit multiple components whose mole fractions change as a function of depth in the dielectric layer in order to create a rounded bottom of a conduction band profile for the dielectric layer.</p> |
申请公布号 |
WO2007033019(A1) |
申请公布日期 |
2007.03.22 |
申请号 |
WO2006US35058 |
申请日期 |
2006.09.08 |
申请人 |
SANDISK CORPORATION;MOKHLESI, NIMA |
发明人 |
MOKHLESI, NIMA |
分类号 |
C23C16/455;C23C16/40;H01L21/28;H01L21/314 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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