LASER ANNEALING METHOD AND DEVICE

摘要

A laser annealing method which is carried out by irradiating with a laser beam a semiconductor film formed on the surface of a substrate, and which comprises the step of generating a linearly polarized rectangular laser beam having a rectangular section perpendicular to an advancing direction with its electric field directed toward the long-side direction of the rectangle, or an elliptically polarized rectangular laser beam with its major axis directed toward the long-side direction, the step of allowing the rectangular laser beam to enter the surface of the substrate, and the step of setting the wavelength of the rectangular laser beam to a length which is about the desired size of a crystal grain in a stationary wave direction.