发明名称 INFORMATION RECORDING ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide an information recording element excellent in moldability and processability, especially an information recording element wherein an organic material exhibiting dielectric characteristics available as a nonvolatile memory is employed in a dielectric layer. SOLUTION: In the information recording element having at least one layer of organic thin film between an anode and a cathode, at least one layer is composed of a mixture of a high molecular compound consisting of structural unit expressed by formula, and at least one kind of different organic high molecular compound. In the formula, R<SP>1</SP>is a substituent selected from a group consisting of one or a plurality of hydrogen atom, halogen atom, hydroxyl group, formyl group, carboxyl group, cyano group, nitro group, amino group, amide group, sulfonic acid group, alkyl group, alkenyl group, alkoxy group, hydroxy alkyl group, acyl group, fatty acid group, benzyl group, aromatic hydrocarbon group, aromatic heterocycle group, and the like, n is an integer of 10 or above, and X and Y independently represent a substituent selected from a group consisting of one or a plurality of hydrogen atom, halogen atom, hydroxyl group, formyl group, carboxyl group, cyano group, nitro group, amino group, acyl group, sulfonic acid group, alkyl group, alkenyl group, alkoxy group, hydroxy alkyl group, carboxyl alkyl group, aromatic hydrocarbon group, aromatic heterocycle group, and the like. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007073557(A) 申请公布日期 2007.03.22
申请号 JP20050255665 申请日期 2005.09.02
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 KAMATA SHUNEI;UEMURA SEI
分类号 H01L27/28;H01L21/8246;H01L27/105;H01L51/05;H01L51/30;H01L51/40 主分类号 H01L27/28
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