| 摘要 |
Provided are a CMOS image sensor and a manufacturing method thereof. The CMOS image sensor includes a gate insulating layer and a gate electrode, a low-density diffusion region of a second conductive type, a high-density diffusion region of the second conductive type, and a high-density diffusion region of a first conductive type. The gate insulating layer and a gate electrode are sequentially formed on an active region of a substrate of the first conductive type having a photodiode region and a transistor region. The low-density diffusion region of the second conductive type is formed on the photodiode region. The high-density diffusion region of the second conductive type is formed on the transistor region. The high-density diffusion region of the first conductive type is formed on the transistor region to nestle the high-density diffusion region of the second conductive type.
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