| 摘要 |
PROBLEM TO BE SOLVED: To provide a storage device and a semiconductor device of high reliability in writing and at low cost, having a nonvolatile memory element capable of adding data after manufacturing and capable of preventing forgery or the like by rewriting. SOLUTION: The memory element comprises a first conductive layer and a second conductive layer. It also comprises a layer which is formed between the first conductive layer and the second conductive layer, and contains a photosensitized redox agent that can be excited by re-coupling energy between electron and positive hole as well as an organic compound containing a substrate that is reactive to the photosensitized redox agent. COPYRIGHT: (C)2007,JPO&INPIT
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