| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device where an insulating film has no air gap, pattern dependency of calcination is small, and pattern dependency of the shape and film thickness of the insulating film is small. SOLUTION: The method of manufacturing the semiconductor device for forming the insulating film which separates an element and another element electrically from each other on a semiconductor substrate is provided with a process of forming a mask layer on the semiconductor substrate, a process for patterning the mask layer, a process for forming a first groove part and a second groove part having different groove widths on the substrate using the patterned mask layer, a process for forming a silicone insulating film by an application method on the substrate, a first calcination process for calcination of a part of the silicone insulating film to a silicone oxide film, a flattening process for removing the silicone oxide film on an outer side than the mask layer by an CMP method for flattening, a second calcination process for calcination of the silicone insulating film, and a process for forming gate electrodes. COPYRIGHT: (C)2007,JPO&INPIT
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