| 摘要 |
A failure analyzing method in a semiconductor device is provided to prevent the damage of the semiconductor device by controlling the number of laser scanning processes. A sample is loaded on a probe station of u-AMOS equipment in order to analyze failure of a semiconductor device and a probe tip is connected to a pad of the sample. A predetermined voltage applied to the work station of the u-AMOS equipment and laser energy are set. A failure analyzing process is performed by pressing a reset key. The failure analyzing process is automatically ended according to a set number of laser scanning processes.
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