发明名称 |
SEMICONDUCTOR DEVICE HAVING OHMIC CONTACT AND A METHOD FOR PROVIDING OHMIC CONTACT WITH SUCH A DEVICE |
摘要 |
<p>The disclosed semiconductor device comprises an ohmic contact between a semiconductor region made of n-conducting silicon carbide and a largely homogeneous ohmic contact layer (110), which adjoins the semiconductor region and is made of a material having a first and a second material component. A silicide formed from the first material component and the silicon of the silicon carbide and a carbide formed from the second material component and the carbon of the silicon carbide are contained in a junction region between the semiconductor region and the ohmic contact layer. The silicide and carbide formation take place at maximum 1000° C.</p> |
申请公布号 |
EP1114465(B1) |
申请公布日期 |
2007.03.21 |
申请号 |
EP19990953550 |
申请日期 |
1999.08.20 |
申请人 |
SICED ELECTRONICS DEVELOPMENT GMBH & CO KG |
发明人 |
BARTSCH, WOLFGANG;SCHOERNER, REINHOLD;STEPHANI, DIETRICH |
分类号 |
H01L29/45;H01L21/04;H01L29/06;H01L29/08;H01L29/24;H01L29/78;H01L29/808 |
主分类号 |
H01L29/45 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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