| 摘要 |
An amplifier system and method is provided for performing gate oxide integrity (GOI) testing of a power output field effect transistor (FET) of the amplifier system. The amplifier system and method provide for integrated test circuitry that protect drive components during overvoltage stress of a gate of the power output FET, and disables and/or isolates drive devices associated with leakage paths from the gate during gate oxide leakage measurements.
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