发明名称 |
ALD ZnO seed layer for deposition of ZnO nanostructures on a silicon substrate |
摘要 |
Zinc-oxide nanostructures are grown without using a metal catalyst by forming a seed layer of polycrystalline zinc oxide on a surface of a substrate. The seed layer can be formed by an atomic layer deposition technique. Growth of at least one zinc-oxide nanostructure is induced on the seed layer. The seed layer can alternatively be formed by using a spin-on technique, such as a metal organic deposition technique, a spray pyrolisis technique, an RF sputtering technique or by oxidation of the seed layer.
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申请公布号 |
US7192802(B2) |
申请公布日期 |
2007.03.20 |
申请号 |
US20040976594 |
申请日期 |
2004.10.29 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
STECKER LISA H.;CONLEY, JR. JOHN F. |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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