发明名称 ALD ZnO seed layer for deposition of ZnO nanostructures on a silicon substrate
摘要 Zinc-oxide nanostructures are grown without using a metal catalyst by forming a seed layer of polycrystalline zinc oxide on a surface of a substrate. The seed layer can be formed by an atomic layer deposition technique. Growth of at least one zinc-oxide nanostructure is induced on the seed layer. The seed layer can alternatively be formed by using a spin-on technique, such as a metal organic deposition technique, a spray pyrolisis technique, an RF sputtering technique or by oxidation of the seed layer.
申请公布号 US7192802(B2) 申请公布日期 2007.03.20
申请号 US20040976594 申请日期 2004.10.29
申请人 SHARP LABORATORIES OF AMERICA, INC. 发明人 STECKER LISA H.;CONLEY, JR. JOHN F.
分类号 H01L21/00 主分类号 H01L21/00
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