发明名称 |
Method for polymer residue removal following metal etching |
摘要 |
A method for removing polymer containing residues from a semiconductor wafer including metal containing features including providing a semiconductor wafer having a process surface including metal containing features said process surface at least partially covered with polymer containing residues; and, subjecting the semiconductor wafer to a series of cleaning steps including sequentially exposing the process surface to at least one primary solvent and at least one intermediate solvent the at least one intermediate solvent comprising an ammonium nitrate containing solution.
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申请公布号 |
US7192489(B2) |
申请公布日期 |
2007.03.20 |
申请号 |
US20030428509 |
申请日期 |
2003.05.01 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LO CHI-HSIN;CHEN FEI-YUN |
分类号 |
B08B3/00;G03F7/42;H01L21/02;H01L21/311;H01L21/3213 |
主分类号 |
B08B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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