| 摘要 |
The content of a few pages of the dynamic random access memory is backed up, then one tries to refresh them less quickly, for example two times less quickly, and one observes whether this does or does not cause errors. The operation is repeated on the entire memory. Depending on the number of errors that have appeared on the pages refreshed less often, the refresh period is decreased or increased. Thus, the memory self-adjusts its refresh period to what is necessary for it.
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