发明名称 |
HIGH ASPECT RATIO ETCH USING MODULATION OF RF POWERS OF VARIOUS FREQUENCIES |
摘要 |
<p>A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is place (404) in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided (408) to the process chamber. A first etch step is provided (412) where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided (416), where the first frequency, the second frequency, and the third frequency are at a different power setting. Optionally, a third etch step may also be provided (420).</p> |
申请公布号 |
SG130195(A1) |
申请公布日期 |
2007.03.20 |
申请号 |
SG20070009798 |
申请日期 |
2004.08.06 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
RUSU, CAMELIA;DHINDSA, RAJINDER;HUDSON, ERIC, A.;SRINIVASAN, MUKUND;LI, LUMIN;KOZAKEVICH, FELIX |
分类号 |
B23B3/10;H01J37/32;H01L21/311;H01L21/467;H05H1/46 |
主分类号 |
B23B3/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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