Field plate trench transistor and production process has isolated field electrode structure connected to a voltage divider to set its potential between those of source and drain or gate and drain

摘要

Field plate trench transistor comprises an electrode structure (4) embedded in a trench (3) in a semiconductor body (2) that is electrically isolated (5) from the body, a gate electrode (6) and a field electrode structure (7) beneath and isolated from the electrode. A voltage divider (15) in and/or on the semiconductor is electrically connected or integrated with the field electrode so that its electrode potential lies between those of the source and drain and/or gate and drain. An independent claim is also included for a production process for the above.