| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing solution for metals by which the plane of a wafer can be uniformly polished at a high polishing rate and which is therefore useful for manufacturing LSIs with high uniformity, and also to provide a chemical mechanical polishing method with excellent polishing rate and polishing uniformity using the same. <P>SOLUTION: The polishing solution for metals is used for chemical mechanical flattening in manufacturing a semiconductor device. The polishing solution 1L contains 0.0001 to 0.01 mol of a heterocyclic compound, and has a value between 1.05 and 1.5 for [(polishing rate at polishing temperature of 40°C)/(polishing rate at polishing temperature of 25°C)]. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
