发明名称 |
PHOTOMASK FOR THE FABRICATION OF A DUAL DAMASCENE STRUCTURE AND METHOD FOR FORMING THE SAME |
摘要 |
<p>A photomask for the fabrication of dual damascene structures and a method for forming the same are provided. A method for fabricating a multilayer step-and-print lithography (SFIL) template includes providing a blank having a substrate, a metallization layer and a first resist layer. A metal layer pattern of a dual damascene structure is formed in the substrate at a first depth using a lithography system. The first resist layer is removed from the blank and a second resist later is applied. The lithography system is used to form a via layer pattern of the dual damascene structure at the first depth while the first pattern is simultaneously etched to a second depth. The first and second patterns correspond to features to be formed in multiple layers of a device using an SFIL process.</p> |
申请公布号 |
WO2007030527(A2) |
申请公布日期 |
2007.03.15 |
申请号 |
WO2006US34697 |
申请日期 |
2006.09.06 |
申请人 |
TOPPAN PHOTOMASKS, INC.;MACDONALD, SUSAN, S. |
发明人 |
MACDONALD, SUSAN, S. |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|