| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of semiconductor laser device of monolithic two-wavelength type which can provide improved processability, control short-circuit failure during assembling, reduce element isolation width, and secure heat dissipation. SOLUTION: The manufacturing method of semiconductor laser device comprises the steps of laminating a compound semiconductor layer forming a first semiconductor laser element on a semiconductor substrate 101 to form a first laminating material 108, by removing the predetermined portion; forming a second laminating material 118 by laminating a compound semiconductor layer forming a second semiconductor laser element on the first laminating material 108 and the semiconductor substrate 101, and removing the predetermined part thereof; forming a window structure to at least one front surface of the first and second laminating materials 108, 118; forming a ridge type waveguide 121 to the upper layer of the first and second laminating materials 108, 118, and also forming a current block layer 124 covering the side surface thereof; and forming an element isolating groove 122 for electrically isolating the first and second laminating layer materials 108, 118, to the overlapping portion of the first laminating layer material 108 and the second laminating layer material 118 on the surface in the sloping side. COPYRIGHT: (C)2007,JPO&INPIT
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