发明名称 VAPOR DEPOSITION APPARATUS, VAPOR DEPOSITION METHOD, OPTICAL ELEMENT, AND CHIRAL SENSOR
摘要 <p>This invention provides a vapor deposition apparatus, which can prepare a high-purity L-isoleucine crystal on a substrate by a dry process while controlling the film thickness with high accuracy, a vapor deposition method, an optical element, and a chiral sensor. A substrate (2) is held at a predetermined substrate distance and a substrate angle ? within a vacuum chamber (4), and the degree of vacuum within the vacuum chamber (4) and the voltage from application means (7) each are set to a predetermined value. According to the above constitution, a starting material (10) for vapor deposition heated by a heating part (6) for a starting material for vapor deposition can be vaporized, and the vaporized starting material (10) for vapor deposition can be allowed to reach the substrate (2). Thus, a high-purity L-isoleucine crystal can be prepared on the substrate (2) by a dry process while controlling the film thickness with a high accuracy.</p>
申请公布号 WO2007029735(A1) 申请公布日期 2007.03.15
申请号 WO2006JP317644 申请日期 2006.09.06
申请人 WASEDA UNIVERSITY;ASAHI, TORU;OSAKA, TETSUYA;TANAKA, MASAHITO;SUZUKI, TOSHIYA 发明人 ASAHI, TORU;OSAKA, TETSUYA;TANAKA, MASAHITO;SUZUKI, TOSHIYA
分类号 C23C14/12;C30B29/54;G01N1/28 主分类号 C23C14/12
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