发明名称 |
VAPOR DEPOSITION APPARATUS, VAPOR DEPOSITION METHOD, OPTICAL ELEMENT, AND CHIRAL SENSOR |
摘要 |
<p>This invention provides a vapor deposition apparatus, which can prepare a high-purity L-isoleucine crystal on a substrate by a dry process while controlling the film thickness with high accuracy, a vapor deposition method, an optical element, and a chiral sensor. A substrate (2) is held at a predetermined substrate distance and a substrate angle ? within a vacuum chamber (4), and the degree of vacuum within the vacuum chamber (4) and the voltage from application means (7) each are set to a predetermined value. According to the above constitution, a starting material (10) for vapor deposition heated by a heating part (6) for a starting material for vapor deposition can be vaporized, and the vaporized starting material (10) for vapor deposition can be allowed to reach the substrate (2). Thus, a high-purity L-isoleucine crystal can be prepared on the substrate (2) by a dry process while controlling the film thickness with a high accuracy.</p> |
申请公布号 |
WO2007029735(A1) |
申请公布日期 |
2007.03.15 |
申请号 |
WO2006JP317644 |
申请日期 |
2006.09.06 |
申请人 |
WASEDA UNIVERSITY;ASAHI, TORU;OSAKA, TETSUYA;TANAKA, MASAHITO;SUZUKI, TOSHIYA |
发明人 |
ASAHI, TORU;OSAKA, TETSUYA;TANAKA, MASAHITO;SUZUKI, TOSHIYA |
分类号 |
C23C14/12;C30B29/54;G01N1/28 |
主分类号 |
C23C14/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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