| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor optical amplifier having a gain spectrum of a wide band, and an optical integrated circuit using the semiconductor optical amplifier. SOLUTION: An active layer 14 of a quantum well structure is constructed on an InP board 11, using an InGaAs film having a tensile distortion as a barrier layer 14b and an InGaAs film having a compression distortion as a well layer 14w. The band gap of the well layer 14w is narrowed to secure a sufficient effective barrier heightΔEc between the quantum level of an electron in the well layer 14w and the conduction band of the barrier layer 14b. COPYRIGHT: (C)2007,JPO&INPIT
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