发明名称 Voltage glitch detection circuits and methods thereof
摘要 Voltage glitch detection circuits and methods thereof. In a first example, the voltage glitch detection circuit may include a monitoring memory array including at least one memory cell storing reference data, a monitoring sense amplifier receiving stored reference data from the monitoring memory array, amplifying the received stored reference data in response to an operation control signal and outputting data based on the reference data, a data storage circuit including at least one latch to store the reference data and a comparator circuit receiving and comparing the data output from the monitoring sense amplifier and the stored reference data from the data storage circuit, and outputting a detection signal based on the comparison. In a second example, the voltage glitch detection circuit may include a first storage unit configured to latch a first voltage, a second storage unit configured to latch a second voltage, a first comparator circuit first comparing the latched first voltage with a first reference voltage and outputting a first comparison result, a second compariator circuit second comparing the second voltage with a second reference voltage and outputting a second comparison result and a third comparator circuit third comparing the first and second comparison results and outputting a reset detection signal based on the third comparison.
申请公布号 US2007058452(A1) 申请公布日期 2007.03.15
申请号 US20060434933 申请日期 2006.05.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM EUI-SEUNG;KIM JUNG-HYUN
分类号 G11C7/10 主分类号 G11C7/10
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