发明名称 |
Integrated process for sputter deposition of a conductive barrier layer, especially an alloy of ruthenium and tantalum, underlying copper or copper alloy seed layer |
摘要 |
A fabrication method and a product for the deposition of a conductive barrier or other liner layer in a vertical electrical interconnect structure. One embodiment includes within a a hole through a dielectric layer a barrier layer of RuTaN, an adhesion layer of RuTa, and a copper seed layer forming a liner for electroplating of copper. The ruthenium content is preferably greater than 50 at % and more preferably at least 80 at % but less than 95 at %. The barrier and adhesion layers may both be sputter deposited. Other platinum-group elements substitute for the ruthenium and other refractory metals substitute for the tantalum. Aluminum alloying into RuTa when annealed presents a moisture barrier. Copper contacts include different alloying fractions of RuTa to shift the work function to the doping type.
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申请公布号 |
US2007059502(A1) |
申请公布日期 |
2007.03.15 |
申请号 |
US20060511869 |
申请日期 |
2006.08.29 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
WANG RONGJUN;CHUNG HUA;TANG XIANMIN;WANG JENN Y.;WANG WEI D.;TANAKA YOICHIRO;YU JICK M.;GOPALRAJA PRABURAM |
分类号 |
B32B7/00;B05D5/12;B32B3/00;C23C14/00;C23C16/00 |
主分类号 |
B32B7/00 |
代理机构 |
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代理人 |
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