| 摘要 |
A system and method for identifying misalignments in an overlapping region of a stitched circuit in an integrated circuit fabrication process. The method comprises: creating a first circuit using a reference mask, wherein first circuit includes a first part of an offset dependent resistor structure in the overlapping region; creating a second circuit using a secondary mask, wherein the second circuit includes a second part of the offset dependent resistor structure in the overlapping region, wherein the offset dependent resistor structure includes a plurality of nubs that interconnect the first part and the second part of theis offset dependent resistor structure; measuring a resistance across the offset dependent resistor structure; and determining an amount of misalignment based on the measured resistance. |
