发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT AND HIGH FREQUENCY POWER AMPLIFIER MODULE
摘要 PROBLEM TO BE SOLVED: To improve the switch characteristics of an SPDT switch to reduce the rising delay of a small-power throttle after a high-power throttle. SOLUTION: Reverse current prevention circuits 28, 29 are provided at control terminals 2h, 2i of an SPDT switch 2 and each composed of two transistors and a diode. When, for example, a small-power throttle passes after a throttle for passing a high power through transistors Qtx1, Qtx2 in a transmission mode, charges stored on the gates of the transistors Qtx1, Qtx2 are prevented from discharging. With the transistors Qtx1, Qtx2 are turned off, charges stored on the gates of the transistors Qtx1, Qtx2 are quickly discharged to perfectly turn off the transistors Qtx1, Qtx2. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007067720(A) 申请公布日期 2007.03.15
申请号 JP20050250183 申请日期 2005.08.30
申请人 RENESAS TECHNOLOGY CORP 发明人 MIURA TOSHIHIRO;AKAMINE HITOSHI;SHIGENO YASUSHI;NAKAJIMA AKISHIGE;TSUCHIYA MASAHIRO
分类号 H03F3/195 主分类号 H03F3/195
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